Doping of inorganic semiconductors such as silicon is usually achieved by ion implantation, which results in stochastic distribution of the implanted ions through the entire semiconductor crystal.

The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the “atomic level manufacturing” of semiconductors. The basic idea of ...

For more than three decades bulk-silicon MOSFET has been the transistor workhorse of CMOS technology. We have become terribly addicted to the density and performance gain from shrinking it. More speed ...