Modelithics, a provider of high-accuracy radio frequency (RF) and microwave simulation models, has announced that new ...
Modelithics expands RF and microwave simulation offering with the addition of new GaN HEMT models from Guerrilla RF.
Kawasaki, Japan, Dec. 09, 2003 — Fujitsu Laboratories Ltd. today announced that it has developed a gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier which achieves the world's ...
The availability of these models marks the final step in commercializing Guerrilla RF’s new GaN-on-SiC HEMT product line. All ...
The lateral structure is currently the most widely used of the various GaN transistor structures. High-electron–mobility transistors (HEMTs) made of gallium nitride are lateral devices that use a ...
MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...
Modelithics and Guerrilla RF Collaborate to Deliver Nonlinear GaN-on-SiC HEMT Models from 15 W to 150 W P SAT for ...
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