EDN

GaN: The high frequency substrate suitable for 5G applications, Part 4

The success of GaN as a substrate for high performances applications, in terms of a very large spectrum of working frequencies, is the result of an intense research activity focused on the possibility ...
EDN

How to GaN: eGaN FETs in High Frequency Buck Converters

The previous column in this series discussed driver and layout considerations to improve the performance achievable with eGaN FETs. In this installment the optimum layout will be implemented in a high ...
WGNO

Highest Power Density for Regulated DC-DC Converters Achieved Using EPC GaN FETs and Analog Devices Controller

EPC and Analog Devices introduce a reference design using a new Analog controller fully optimized to drive EPC GaN FETs and achieving > 96.5% efficiency. GaN FETs are required to achieve maximum power ...
Business Wire

Panasonic Develops GaN Diodes with High Current Operations and a Low Turn-on Voltage

OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it developed gallium nitride (GaN) diodes that can not only operate at a high current that is four times greater than that ...
EuropaWire

Sener Leads European SGAN Next Project to Develop High Frequency GaN Technology for Future Satellite Communications

Sener is coordinating the SGAN-Next project, a Horizon Europe initiative focused on developing high-frequency gallium nitride-based electronic components for next-generation satellite communications.
Electronic Design

GaN Delivers High Power Density for Solar-Power Applications

Members can download this article in PDF format. Innovative photovoltaic inverters are key components driving growth in the solar-power market. Gallium-nitride (GaN) technology, in turn, is essential ...
Electronic Design

GaN: Switching It Up in Power Electronics

Gallium nitride (GaN) is breaking out in the world of power electronics. GaN stands out for its superior physical properties, including high electron mobility, wide bandgap, and high thermal ...