Business Wire

Rad Hard 100 V GaN Transistor from EPC Offers Lowest On-Resistance Solution on the Market for Demanding Space Applications

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100 V, 3.9 mΩ, 345 A Pulsed, rad-hard GaN FET in a small 13.9 mm 2 ...
Business Wire

Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 A Pulsed, rad-hard GaN FET in a small 6.56 mm 2 ...
EDN

Rad Hard Medium Power Op Amp

The MSK0041RH is a radiation hardened medium power operational amplifier (op amp). This device provides high output currents, ideal for motor drive circuits. It is the industry wide RAD HARD ...
EDN

Rad-hard 200-V GaN transistor delivers ultra-low on-resistance

Efficient Power Conversion (EPC) has expanded its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in spaceborne and other high-reliability ...