Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
Check out more Kit Close-Up videos. This video is also part of the TechXchange: Silicon Carbide (SiC). As electric vehicles are equipped with 400- to 800-V battery packs, the power systems under the ...
SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...
GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire.com/ -- STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
PCIM Europe, an international exhibition and conference for power electronics and its applications, hosted 515 exhibitors, 300 tutorials and workshops, and 107 forum presentations at this week’s show ...
All questions and answers are based on the 2017 NEC. Q. Per the NEC, overcurrent protection devices must be placed at what location in branch-circuit or feeder conductors? A. Except as permitted by ...
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