Abstract: Low damage atomic layer etching (ALE) gate recess is developed for fabrication of millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced bombardments to the ...
Abstract: Due to the high cost of sea trials and the variability of sea states, the duration of experiments is usually too short to fully verify underwater acoustic communication (UAC) performance in ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback